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U.S. Department of Energy
Office of Scientific and Technical Information

Thermal decomposition of silane to form hydrogenated amorphous Si

Patent ·
OSTI ID:5374683

Hydrogenated amorphous silicon is produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, at elevated temperatures of about 1700 to 2300/sup 0/C, in a vacuum of about 10/sup -8/ to 10/sup -4/ torr. A gaseous mixture is formed of atomic hydrogen and atomic silicon. The gaseous mixture is deposited onto a substrate to form hydrogenated amorphous silicon.

DOE Contract Number:
EY-76-C-02-0016
Assignee:
TIC; EDB-80-066802; ERA-05-024367
Patent Number(s):
None
OSTI ID:
5374683
Country of Publication:
United States
Language:
English