Thermal decomposition of silane to form hydrogenated amorphous Si
Patent
·
OSTI ID:5374683
Hydrogenated amorphous silicon is produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, at elevated temperatures of about 1700 to 2300/sup 0/C, in a vacuum of about 10/sup -8/ to 10/sup -4/ torr. A gaseous mixture is formed of atomic hydrogen and atomic silicon. The gaseous mixture is deposited onto a substrate to form hydrogenated amorphous silicon.
- DOE Contract Number:
- EY-76-C-02-0016
- Assignee:
- TIC; EDB-80-066802; ERA-05-024367
- Patent Number(s):
- None
- OSTI ID:
- 5374683
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
AMORPHOUS STATE
CHEMICAL REACTIONS
DECOMPOSITION
DIRECT ENERGY CONVERTERS
ELEMENTS
HYDRIDES
HYDROGEN COMPOUNDS
HYDROGENATION
MATERIALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PRODUCTION
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
AMORPHOUS STATE
CHEMICAL REACTIONS
DECOMPOSITION
DIRECT ENERGY CONVERTERS
ELEMENTS
HYDRIDES
HYDROGEN COMPOUNDS
HYDROGENATION
MATERIALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PRODUCTION
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS