Decomposition of silane on tungsten or other materials

Patent ·

OSTI ID:5374684

Wiesmann, H J

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, from a W or foil heated to a temperature of about 1400 to 1600/sup 0/C, in a vacuum of about 10-/sup 6/ to 10-/sup 4/ torr. A gaseous mixture is formed of atomic hydrogen and atomic silicon. The gaseous mixture is deposited onto a substrate independent of and outside the source of thermal decomposition. Hydrogenated amorphous silicon is formed. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

• DOE Contract Number: EY-76-C-02-0016
• Assignee: TIC; EDB-80-066799; ERA-05-024364
• Patent Number(s): None
• OSTI ID: 5374684
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
360104 -- Metals & Alloys-- Physical Properties
AMORPHOUS STATE
CARBON
CHEMICAL REACTIONS
DECOMPOSITION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
HIGH VACUUM
HYDRIDES
HYDROGEN COMPOUNDS
HYDROGENATION
IMPURITIES
MATERIALS
METALS
NONMETALS
PASSIVATION
PHOTOCONDUCTIVITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PRODUCTION
REFRACTORY METALS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SUBSTRATES
TRANSITION ELEMENTS
TUNGSTEN