Thermal decomposition of silane to form hydrogenated amorphous Si film

Patent · Mon Dec 31 23:00:00 EST 1979

OSTI ID:863739

Strongin, Myron ^[1]; Ghosh, Arup K ^[2]; Wiesmann, Harold J ^[3]; Rock, Edward B ^[4]

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1. Center Moriches, NY
2. Rocky Point, NY
3. Wantagh, NY
4. Oxford, GB

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

• Research Organization: Brookhaven National Laboratory (BNL), Upton, NY
• DOE Contract Number: EY-76-C-02-0016
• Assignee: United States of America as represented by United States (Washington, D. C. 20545)
• Patent Number(s): US 4237151
• OSTI ID: 863739
• Country of Publication: United States
• Language: English

Related Subjects

-2300
-4
-8
/427/136/252/423/428/438/
10
1700
amorphous
amorphous silicon
atomic
atomic hydrogen
comprising
decomposing
decomposition
degree
depositing
elevated
elevated temperature
elevated temperatures
film
form
form hydrogen
form hydrogenated
gaseous
gaseous mixture
gases
gases comprising
hydrogen
hydrogenated
hydrogenated amorphous
mixture
outside
preferably
produced
relates
sih
silane
silano
silicon
silicon produced
source
substrate
temperatures
thermal
thermal decomposition
thermally
thermally decomposing
torr
vacuum