Method of producing hydrogenated amorphous silicon film

Patent · Tue Jan 01 00:00:00 EST 1980

OSTI ID:863738

Wiesmann, Harold J ^[1]

---

1. Wantagh, NY

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH.sub.4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400.degree.-1600.degree. C., in a vacuum of about 10.sup.-6 to 19.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

• Research Organization: Brookhaven National Laboratory (BNL), Upton, NY (United States)
• DOE Contract Number: EY-76-C-02-0016
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4237150
• OSTI ID: 863738
• Country of Publication: United States
• Language: English

Related Subjects

method
producing
hydrogenated
amorphous
silicon
film
relates
produced
thermally
decomposing
silane
sih
gases
comprising
tungsten
carbon
foil
heated
temperature
1400
degree
-1600
vacuum
10
-6
19
-4
torr
form
gaseous
mixture
atomic
hydrogen
depositing
gaseos
substrate
independent
outside
source
thermal
decomposition
presence
ammonia
atmosphere
chamber
enhances
photoconductivity
gases comprising
thermally decomposing
atomic hydrogen
silicon film
thermal decomposition
vacuum chamber
gaseous mixture
amorphous silicon
hydrogenated amorphous
producing hydrogen
producing hydrogenated
ammonia atmosphere
silicon produced
form hydrogen
form hydrogenated
/438/136/252/423/427/428/