Evaluation of the guardband implant diffusion processes

Technical Report · Tue May 01 04:00:00 EDT 1990

DOI:https://doi.org/10.2172/7120820· OSTI ID:7120820

Williams, M F

Breakdown voltage is a measure of damage inflicted upon a wafer during ion implantation. If the voltage is low, it is desirable to increase the voltage, which should increase the wafer yield. Two methods can be implemented to increase this voltage. One is to increase the pre-implant oxide thickness, and the other is to increase the annealing process to reduce the damage. This study encompassed both methods. Results indicated that an increase of 150 {Angstrom} in the pre-implant oxide and an increase of 50{degrees}C in annealing temperature improved yield by approximately 9% due to increased breakdown voltage. 4 tabs.

• Research Organization: Allied-Signal Aerospace Co., Kansas City, MO (USA). Kansas City Div.
• Sponsoring Organization: DOE/DP
• DOE Contract Number: AC04-76DP00613
• OSTI ID: 7120820
• Report Number(s): KCP-613-4268; ON: DE90010337
• Country of Publication: United States
• Language: English

Related Subjects

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42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ANNEALING
BORON
BREAKDOWN
CHALCOGENIDES
COATINGS
CONTROL
DAMAGE
DIFFUSION COATINGS
DIMENSIONS
DOPED MATERIALS
ELECTRIC POTENTIAL
ELEMENTS
FABRICATION
HEAT TREATMENTS
HYDROGEN COMPOUNDS
INORGANIC ACIDS
ION IMPLANTATION
MANUFACTURING
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE TESTING
PROCESS CONTROL
SEMICONDUCTOR DEVICES
SEMIMETALS
STANDARDS
SUBSTRATES
SULFURIC ACID
TEMPERATURE EFFECTS
TESTING
THICKNESS