Formation of ultrathin nitrided SiO{sub 2} oxides by direct nitrogen implantation into silicon

Journal Article · Tue Aug 01 04:00:00 EDT 1995 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.2050110· OSTI ID:110111

Soleimani, H R; Doyle, B S; Philipossian, A ^[1]

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1. Digital Equipment Corp., Hudson, MA (United States). ULSI Operations Group

A nitridation technique is proposed for ultrathin, SiO{sub 2} oxides in deep submicron CMOS technology, which involves direct implantation of molecular nitrogen (N{sub 2}) into the silicon substrate. N{sub 2} ions were implanted into silicon at different doses and energies, through a 150 {angstrom} thick screen oxide. In this study the effect of implanted N atoms on silicon oxidation, and SiO{sub 2} oxide nitridation process have been studied. Two groups of the N{sub 2}-implanted wafers were used: wafers from one group were annealed prior to the screen oxide removal, whereas wafers of the other group did not receive this anneal. It is shown that nitridation can be achieved both ways, allowing this technique to be easily integrated into a semiconductor IC fabrication process.

• Sponsoring Organization: USDOE
• OSTI ID: 110111
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 8 Vol. 142; ISSN JESOAN; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ELECTRIC CONDUCTIVITY
ION IMPLANTATION
NITRIDATION
P-TYPE CONDUCTORS
SILICON
SILICON OXIDES