Band offsets for ultrathin SiO[sub 2] and Si[sub 3]N[sub 4] films on Si(111) and Si(100) from photoemission spectroscopy. [SiO[sub 2]; Si[sub 3]N[sub 4]]

Conference · Thu Jul 01 04:00:00 EDT 1999 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

OSTI ID:6303979

Keister, J W ^[1]; Rowe, J E ^[2]; Kolodziej, J J ^[3]; Niimi, H ^[4]; Madey, T E ^[5]

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1. Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202 (United States) National Research Council Postdoctoral Associate at the Army Research Office, Research Triangle Park, North Carolina 27709-2211 (United States)
2. Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202 (United States) Physics and Astronomy Department and Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08855-0849 (United States) Physics Division, Army Research Office, Research Triangle Park, North Carolina 27709-2211 (United States)
3. Physics and Astronomy Department and Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08855-0849 (United States)
4. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202 (United States)
5. Physics and Astronomy Department an

High resolution soft x-ray photoelectron spectroscopy with synchrotron radiation is used to study the interfaces of SiO[sub 2]/Si(111), SiO[sub 2]/Si(100), Si(111)/Si[sub 3]N[sub 4], and SiO[sub 2]/Si[sub 3]N[sub 4] for device-quality ultrathin gate oxides and nitrides. The thin oxides and nitrides were grown by remote plasma deposition at a temperature of 300 hthinsp;[degree]C. Aftergrowth samples were further processed by rapid thermal annealing for 30 hthinsp;s at various temperatures from 700 to 950 hthinsp;[degree]C. The Si(111)/Si[sub 3]N[sub 4] samples were air exposed and formed a thin [approximately]6 [Angstrom] SiO[sub 2] layer with a Si(2p) core-level shift of 3.9 eV, thus allowing us to study both the Si(111)/Si[sub 3]N[sub 4] and SiO[sub 2]/Si[sub 3]N[sub 4] interfaces with a single type of sample. We obtain band offsets of 4.54[plus minus]0.06 eV for SiO[sub 2]/Si(111) and 4.35[plus minus]0.06 eV for SiO[sub 2]/Si(100) with film thicknesses in the range 8[endash]12 [Angstrom]. The Si(111)/Si[sub 3]N[sub 4] nitrides show 1.78[plus minus]0.09 eV valence-band offset for 15[endash]21 [Angstrom] films. This value agrees using the additivity relationship with our independent photoemission measurements of the nitride[endash]oxide valence-band offset of 2.66[plus minus]0.14 eV. However, we measure a substantially larger SiO[sub 2]/Si[sub 3]N[sub 4] [Delta]E[sub V] value of 3.05 eV for thicker ([approximately]60 [Angstrom]) films, and this indicates substantial differences in core-hole screening for films of different thickness due to additional silicon substrate screening in the thinner (15[endash]21 [Angstrom]) films. [copyright] [ital 1999 American Vacuum Society.]

• OSTI ID: 6303979
• Report Number(s): CONF-990138--
• Conference Information: Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Volume: 17:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ANNEALING
BREMSSTRAHLUNG
CHALCOGENIDES
CHEMICAL REACTIONS
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
EMISSION
FILMS
HEAT TREATMENTS
INTERFACES
NITRIDES
NITROGEN COMPOUNDS
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PHOTOEMISSION
PLASMA
PNICTIDES
RADIATIONS
SECONDARY EMISSION
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
SYNCHROTRON RADIATION
THIN FILMS