Valence band offset and interface stoichiometry at epitaxial Si{sub 3}N{sub 4}/Si(111) heterojunctions formed by plasma nitridation
- Department of Physics, National Tsing-Hua University, Hsinchu 30013, Taiwan (China)
- National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan (China)
Ultrathin {beta}-Si{sub 3}N{sub 4}(0001) epitaxial films formed by N{sub 2}-plasma nitridation of Si(111) substrates have been studied by photoelectron spectroscopy using synchrotron radiation. The valence band offset at the {beta}-Si{sub 3}N{sub 4}/Si interface was determined by valence-band photoelectron spectra to be 1.8 eV. Furthermore, the Si 2p core-level emissions were analyzed for nitride (Si{sup 4+}) and subnitride (Si{sup 3+} and Si{sup +}) components to characterize the interface stoichiometry. In contrast to the interfaces formed by ammonia thermal nitridation and N{sub 2}-plasma nitridation at room temperature, the interface formed by N{sub 2}-plasma nitridation at high substrate temperature is very close to subnitride free with an abrupt composition transition.
- OSTI ID:
- 21294486
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 95; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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