Plasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics
- Philips Research Leuven, Kapeldreef 75, 3001 Leuven (Belgium)
We have investigated the mechanism of N incorporation, during plasma nitridation, in thermally grown ultrathin (<2 nm) SiO{sub 2} films and deposited silicon-rich oxide films. X-ray photoelectron spectroscopy analysis indicates that N atoms exchange mainly with O to bond with Si atoms in ultrathin plasma-nitrided oxides. Based on this understanding, we were able to increase the amount of N that can be incorporated in plasma-nitrided silicon oxides by increasing the silicon content in these films. This was achieved by depositing ultrathin substoichiometric silicon-rich oxide films. We demonstrate an increase of almost twice as much N in these ultrathin plasma-nitrided silicon-rich oxide films yielding lower gate leakage current for a given thickness.
- OSTI ID:
- 20702385
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 86; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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