Implantation damage study in ferromagnetic Mn-implanted Si

Journal Article · Sun Jul 15 04:00:00 EDT 2007 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2713117· OSTI ID:20979510

Awo-Affouda, C; Bolduc, M; LaBella, V P ^[1]

---

1. College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203 (United States)

To investigate the influence of the residual implant damage and postimplant annealing upon the structure and magnetic properties of Mn-implanted Si, lattice disorder depth profiles were obtained from Rutherford backscattering spectroscopy (RBS)-channeling experiments on Mn-implanted <100> oriented p-type Si wafers. The defect concentration profiles were extracted from the RBS spectra using the two beam model. These profiles reveal a strong influence of the postimplant annealing temperatures upon the defects generated from implantation. Specifically, above 800 deg. C, the backscattering yield from Si lattice defects decreases, which is coincident with a decrease in the magnetization. The evolution of the Mn concentration profiles and the magnetization suggest that the magnetization originates from Mn atoms located in the least damaged region.

• OSTI ID: 20979510
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 4 Vol. 25; ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BACKSCATTERING
BORON
CHANNELING
CRYSTAL DEFECTS
DAMAGE
DEFECTS
FERROMAGNETIC MATERIALS
ION IMPLANTATION
MAGNETIC PROPERTIES
MAGNETIZATION
MANGANESE
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON