Room-temperature annealing of Si implantation damage in InP

Journal Article · Mon Nov 11 00:00:00 EST 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.105957· OSTI ID:5095318

Akano, U G; Mitchell, I V ^[1]; Shepherd, F R ^[2]

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1. University of Western Ontario, London, ON (Canada). Dept. of Physics
2. Bell-Northern Research, Ottawa, Ontario, (Canada)

Spontaneous recovery at 295 K of Si implant damage in InP is reported. InP(Zn) and InP(S) wafers of (100) orientation have been implanted at room temperature with 600 keV Si{sup +} ions to doses ranging from 3.6{times}10{sup 11} to 2{times}10{sup 14} cm{sup {minus}2}. Room-temperature annealing of the resultant damage has been monitored by the Rutherford backscattering/channeling technique. For Si doses {le}4{times}10{sup 13} cm{sup {minus}2}, up to 70% of the initial damage (displaced atoms) annealed out over a period of {approx}85 days. The degree of recovery was found to depend on the initial level of damage. Recovery is characterized by at least two time constants {ital t}{sub 1}{lt}5 days and a longer {ital t}{sub 2}{approx}100 days. Anneal rates observed between 295 and 375 K are consistent with an activation energy of 1.2 eV, suggesting that the migration of implant-induced vacancies is associated with the reordering of the InP lattice.

• OSTI ID: 5095318
• Journal Information: Applied Physics Letters; (United States), Vol. 59:20; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
ANNEALING
PHYSICAL RADIATION EFFECTS
DIFFUSION
ION IMPLANTATION
MEDIUM TEMPERATURE
SILICON
VACANCIES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
HEAT TREATMENTS
INDIUM COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POINT DEFECTS
RADIATION EFFECTS
SEMIMETALS
360605* - Materials- Radiation Effects