Characterization of Si implantation and annealing of InP by Raman spectroscopy
- C.S.I.C., Barcelona (Spain). Inst. Jaime Almera
- Univ. Complutense de Madrid (Spain). Dept. Electricidad y Electronica
Raman scattering was used to assess the lattice damage caused by Si{sup +} implantation in InP, as well as the lattice recovery achieved after rapid thermal annealing (RTA). Semi-insulating InP was implanted with Si{sup +} with doses in the range of 10{sup 12} to 5 {times} 10{sup 14}cm{sup {minus}2}. Raman scattering measurements show a progressive intensity reduction of the characteristic first- and second-order InP Raman peaks and an enhancement of the disorder activated modes with increasing dose. The onset of amorphization was found to be at about 10{sup 14} cm{sup {minus}2}. RTA of the implanted samples at 875 C for 10s results in a very good recovery of the InP lattice even for the highest dose, as confirmed by Raman scattering measurements.
- OSTI ID:
- 375942
- Report Number(s):
- CONF-941144--; ISBN 1-55899-255-3
- Country of Publication:
- United States
- Language:
- English
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