High resolution electron microscopy study of damage created in Si-implanted InP

Journal Article · Mon Sep 23 00:00:00 EDT 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.106266· OSTI ID:5170293

Zheng, P; Ruault, M ^[1]; Pitaval, M ^[2]; Descouts, B; Krauz, P ^[3]; Gasgnier, M ^[4]; Crestou, J ^[5]

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1. Centre de Spectrometrie Nucleaire et Spectrometrie de Masse, Bat. 108, 91405 Campus Orsay (France)
2. Departemente de Physique des Materiaux, Universite Claude Bernard, Lyon I, 69622 Villeurbanne (France)
3. Centre National d'Etudes des Telecommunications, 196 Avenue Henri Ravera, 92220 Bagneux (France)
4. Centre National de la Recherche Scientifique, 1 place A. Briand, 92195 Meudon (France)
5. Centre d'elaboration des Materiaux et d'etudes Structurales, 29 rue J. Marvig, 31055 Toulouse (France)

{l brace}011{r brace} oriented InP crystals were implanted with 50 keV Si{sup +} ions (doses: 5{times}10{sup 12} and 10{sup 14} Si/cm{sup 2}). The individual cluster density and size were compared with those previously obtained in {l brace}001{r brace} oriented crystals. The high-resolution electron microscopy observations are consistent with an amorphous nature of these strained clusters. Further annealing of the amorphous zone obtained at the highest implantation dose shows lattice deformation or microtwins in the epitaxial recrystallized InP. Moreover, many InP undetermined and incoherent precipitates'' are observed.

• OSTI ID: 5170293
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:13; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
CHARGED PARTICLES
CRYSTAL STRUCTURE
DAMAGE
ELECTRON MICROSCOPY
ENERGY RANGE
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 10-100
MICROSCOPY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RECRYSTALLIZATION
SILICON IONS
TWINNING