Model of the recrystallization mechanism of amorphous silicon layers created by ion implantation
The recrystallization behavior during annealing of thin films of amorphous (..cap alpha..) silicon, in contact with a single crystal silicon substrate (referred to as C), has been studied in the transmission electron microscope (TEM). The amorphous film is created during high dose phosphorus ion implantation at 100 keV. It was found that the crystal substrate orientation and the implantation temperature have dramatic effects on the recrystallizaton rate, and the defect microstructure produced during annealing. Specifically, (100) wafers implanted at 77/sup 0/K contain only a low density of dislocation loops, but when the same wafer is implanted at room temperature the dislocation density is increased drastically. (111) wafers, when implanted at 77/sup 0/K show a high density of microtwins, but as the implantation temperature is increased a gradual increase in the density of dislocation loops is observed along with a reduction of the microtwins. At an implantation temperature of about 100/sup 0/C both orientations give an identical defect microstructure when annealed, which is a dense tangle of dislocations.
- Research Organization:
- California Univ., Berkeley (USA). Lawrence Berkeley Lab.
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 5676953
- Report Number(s):
- LBL-9990
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602 -- Other Materials-- Structure & Phase Studies
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ATOMIC IONS
CHARGED PARTICLES
ELEMENTS
ENERGY RANGE
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 10-100
PHOSPHORUS IONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RECRYSTALLIZATION
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE