Model of the recrystallization mechanism of amorphous silicon layers created by ion implantation
The recrystallization behavior during annealing of thin films of amorphous (..cap alpha..) silicon, in contact with a single crystal silicon substrate (referred to as C), has been studied in the transmission electron microscope (TEM). The amorphous film is created during high dose phosphorus ion implantation at 100 keV. It was found that the crystal substrate orientation and the implantation temperature have dramatic effects on the recrystallizaton rate, and the defect microstructure produced during annealing. Specifically, (100) wafers implanted at 77/sup 0/K contain only a low density of dislocation loops, but when the same wafer is implanted at room temperature the dislocation density is increased drastically. (111) wafers, when implanted at 77/sup 0/K show a high density of microtwins, but as the implantation temperature is increased a gradual increase in the density of dislocation loops is observed along with a reduction of the microtwins. At an implantation temperature of about 100/sup 0/C both orientations give an identical defect microstructure when annealed, which is a dense tangle of dislocations.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 5676953
- Report Number(s):
- LBL-9990; TRN: 80-004566
- Resource Relation:
- Other Information: Thesis
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SILICON
RECRYSTALLIZATION
AMORPHOUS STATE
ION IMPLANTATION
KEV RANGE 10-100
PHOSPHORUS IONS
PHYSICAL RADIATION EFFECTS
TEMPERATURE DEPENDENCE
ATOMIC IONS
CHARGED PARTICLES
ELEMENTS
ENERGY RANGE
IONS
KEV RANGE
RADIATION EFFECTS
SEMIMETALS
360605* - Materials- Radiation Effects
360602 - Other Materials- Structure & Phase Studies