Flame annealing of ion implanted silicon

Journal Article · Sat Jan 01 04:00:00 EST 1983 · Mater. Res. Soc. Symp. Proc.; (United States)

OSTI ID:6692969

Narayan, J; Young, R T

The authors investigated flame annealing of ion implantation damage (consisting of amorphous layers and dislocation loops) in (100) and (111) silicon substrates. The temperature of a hydrogen flame was varied from 1050 to 1200/sup 0/C and the interaction time from 5 to 10 seconds. Detailed TEM results showed that a defect-free annealing of amorphous layers by solid-phase-epitaxial growth could be achieved up to a certain concentration. However, dislocation loops in the region below the amorphous layer exhibited coarsening, i.e., the average loop size increased while the number density of loops decreased. Above a critical loop density, which was found to be a function of ion implantation variables and substrate temperature, formation of 90/sup 0/ dislocations (a cross-grid of dislocation in (100) and a triangular grid in (111) specimens) were observed. Electrical (Van der Pauw) measurements indicated nearly a complete electrical activation of dopants with mobility comparable to pulsed laser annealed specimens. The characteristics of p-n junction diodes showed a good diode perfection factor of 1.20-1.25 and low reverse bias currents.

• Research Organization: Oak Ridge National Lab., TN
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 6692969
• Journal Information: Mater. Res. Soc. Symp. Proc.; (United States), Journal Name: Mater. Res. Soc. Symp. Proc.; (United States) Vol. 13; ISSN MRSPD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ANNEALING
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
EPITAXY
HEAT TREATMENTS
ION IMPLANTATION
LASER RADIATION
MATERIALS
PHYSICAL PROPERTIES
RADIATIONS
SEMIMETALS
SILICON