Flame annealing of ion implanted silicon

Journal Article · Sat Jan 01 00:00:00 EST 1983 · Mater. Res. Soc. Symp. Proc.; (United States)

OSTI ID:6692969

Narayan, J; Young, R T

The authors investigated flame annealing of ion implantation damage (consisting of amorphous layers and dislocation loops) in (100) and (111) silicon substrates. The temperature of a hydrogen flame was varied from 1050 to 1200/sup 0/C and the interaction time from 5 to 10 seconds. Detailed TEM results showed that a defect-free annealing of amorphous layers by solid-phase-epitaxial growth could be achieved up to a certain concentration. However, dislocation loops in the region below the amorphous layer exhibited coarsening, i.e., the average loop size increased while the number density of loops decreased. Above a critical loop density, which was found to be a function of ion implantation variables and substrate temperature, formation of 90/sup 0/ dislocations (a cross-grid of dislocation in (100) and a triangular grid in (111) specimens) were observed. Electrical (Van der Pauw) measurements indicated nearly a complete electrical activation of dopants with mobility comparable to pulsed laser annealed specimens. The characteristics of p-n junction diodes showed a good diode perfection factor of 1.20-1.25 and low reverse bias currents.

• Research Organization: Oak Ridge National Lab., TN
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 6692969
• Journal Information: Mater. Res. Soc. Symp. Proc.; (United States), Vol. 13
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
ANNEALING
ELECTRICAL PROPERTIES
CRYSTAL DEFECTS
CRYSTAL GROWTH
DOPED MATERIALS
EPITAXY
ION IMPLANTATION
LASER RADIATION
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELEMENTS
HEAT TREATMENTS
MATERIALS
PHYSICAL PROPERTIES
RADIATIONS
SEMIMETALS
360601* - Other Materials- Preparation & Manufacture
360603 - Materials- Properties