Flame annealing of arsenic and boron implanted silicon

Journal Article · Tue Mar 01 04:00:00 EST 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93972· OSTI ID:6385377

Narayan, J; Young, R T

We have investigated the characteristics of flame annealing of ion implantation damage in (100) and (111) silicon substrates using transmission electron microscopy and Van der Pauw measurements. The temperature of the hydrogen flame ranged from 1050 to 1200 /sup 0/C and the interaction time from 5 to 10 s. Transmission electron microscopy studies showed that a ''defect-free'' annealing could be achieved with concomitant full electrical activation of dopants. The Hall mobility of flame annealed specimens was found to be comparable to pulsed laser annealed specimens.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 6385377
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 42:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ANNEALING
ARSENIC IONS
BORON IONS
CHARGED PARTICLES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
ELEMENTS
FLAMES
HALL EFFECT
HEAT TREATMENTS
ION IMPLANTATION
IONS
MICROSCOPY
MOBILITY
ORIENTATION
SEMIMETALS
SILICON
SUBSTRATES
TIME DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY
VERY HIGH TEMPERATURE