Rapid thermal annealing of arsenic and boron-implanted silicon

Journal Article · Tue Nov 15 04:00:00 EST 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94200· OSTI ID:5685822

Narayan, J; Holland, O W; Eby, R E; Wortman, J J; Ozguz, V; Rozgonyi, G A

Annealing of ion implantation damage and concomitant electrical activation of dopants, depth profiles, and lattice location of dopants have been studied in arsenic and boron-implanted specimens after rapid thermal annealing. A ''complete'' annealing of displacement damage with full electrical activation of dopants and profile broadening less than 100 A can be attained for shallow implants whereas some extended defects are retained for deep implants. Mechanisms of rapid thermal annealing and its implications in solid state device fabrication are discussed.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 5685822
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
AMORPHOUS STATE
ANNEALING
ARSENIC IONS
BORON IONS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
DISLOCATIONS
DOSE RATES
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 10-100
LINE DEFECTS
MICROSCOPY
MONOCRYSTALS
SEMIMETALS
SILICON
TRANSMISSION ELECTRON MICROSCOPY
VERY HIGH TEMPERATURE