Rapid thermal anneal of arsenic implanted silicon
The distribution of arsenic implanted into silicon during rapid thermal anneal (RTA) was investigated. Secondary ion mass spectrometry, Rutherford backscattering spectrometry, and channeling techniques were used for the measurement of the total (chemical) dopant profile. The electrically active dopant profiles were measured with sheet resistance, sheet-resistance maps, spreading resistance and pinch resistors. It was found that arsenic profile after RTA is influenced by many parameters including crystallographic orientation of the sample, temperature gradient, and defect structure in the surface part affected by heavy arsenic implant. A diffusion model based on inhomogeneous medium was examined. Exact solutions of the diffusion equation were obtained for the rectangular and Gaussian initial dopant profiles. Calculated results are compared to the measured profiles. It is concluded that model satisfactory predicts the major features of the arsenic diffusion into silicon during RTA.
- Research Organization:
- Pennsylvania Univ., Philadelphia (USA)
- OSTI ID:
- 5283443
- Country of Publication:
- United States
- Language:
- English
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