Application of rapid thermal annealing to arsenic-implanted single-crystal and polycrystalline silicon

Thesis/Dissertation · Fri Jan 01 04:00:00 EST 1988

OSTI ID:6263276

Hoyt, J L

Rapid thermal annealing (RTA) has opened up an additional temperature-time processing regime for semiconductor device fabrication. Despite its potential, RTA has yet to be accepted in production. This study provides an improved understanding of several fundamental and practical issues concerning RTA of arsenic-implanted silicon and polysilicon layers. Defects created by ion-implanted dopants can give rise to transient diffusion effects. Large enhancement (100X) in the diffusivity of implanted arsenic during RTA have been reported. However, it is demonstrated here that arsenic diffusion can be simulated using standard process models which account for concentration-dependent effects. A beneficial application of RTA that has direct bearing on device characteristics is also demonstrated. RTA is employed to induce complete epitaxial regrowth alignment of arsenic-implanted polysilicon emitter contacts for bipolar transistors.

• Research Organization: Stanford Univ., CA (USA)
• OSTI ID: 6263276
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
ARSENIC IONS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
ELEMENTS
FABRICATION
HEAT TREATMENTS
ION IMPLANTATION
IONS
MONOCRYSTALS
POLYCRYSTALS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON