Epitaxial alignment of arsenic implanted polycrystalline silicon films on <100> silicon obtained by rapid thermal annealing
We have performed a quantitative analysis of epitaxial quality and arsenic diffusion in ion implanted polycrystalline silicon (polysilicon) layers on <100> Si, and find a clear advantage for the use of high-temperature rapid thermal annealing (RTA) in the 10-s regime to induce intentional, complete epitaxial alignment. The RTA-induced alignment kinetics and associated arsenic diffusion were studied in the 1050--1150 /sup 0/C temperature range for arsenic doping concentrations between 1 x 10/sup 20/ and 1 x 10/sup 21/ cm/sup -3/, and were characterized by Rutherford backscattering, ion channeling, and cross-sectional transmission electron microscopy. The information about the relationship between arsenic diffusion, arsenic concentration, and epitaxial quality resulting from a given RTA cycle will be useful for optimizing bipolar transistors with realigned polysilicon emitter contacts.
- Research Organization:
- Stanford Electronics Labs, Stanford University, Stanford, California 94305
- OSTI ID:
- 6655477
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:12; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601 -- Other Materials-- Preparation & Manufacture
360602* -- Other Materials-- Structure & Phase Studies
ALIGNMENT
ARSENIC IONS
BACKSCATTERING
CHANNELING
CHARGED PARTICLES
CHARGED-PARTICLE TRANSPORT
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CRYSTAL DOPING
DEPOSITION
DIFFUSION
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
ION CHANNELING
ION IMPLANTATION
IONS
MICROSCOPY
RADIATION TRANSPORT
SCATTERING
SEMIMETALS
SILICON
SURFACE COATING
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY
VERY HIGH TEMPERATURE