Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

Journal Article · Sun May 01 04:00:00 EDT 1977 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.323933· OSTI ID:7318343

Tsukamoto, K; Akasaka, Y; Horie, K

Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He/sup +/ backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ..delta..R/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp((-3.22 eV/kT)) and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N/sub 2/ atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si/sub 3/N/sub 4/. In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO/sub 2/ due to the segregation between SiO/sub 2/ and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side.

• Research Organization: LSI Development Laboratory, Mitsubishi Electric Corporation, Minamishimizu, Amagasaki, Hyogo, 661, Japan
• OSTI ID: 7318343
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC IONS
ATOMIC IONS
BACKSCATTERING
CHARGED PARTICLES
CHEMICAL ANALYSIS
CRYSTALS
DEPTH DOSE DISTRIBUTIONS
DIFFUSION
DOPED MATERIALS
ELEMENTS
HEAT TREATMENTS
ION IMPLANTATION
ION SCATTERING ANALYSIS
IONS
NONDESTRUCTIVE ANALYSIS
PHYSICAL RADIATION EFFECTS
POLYCRYSTALS
RADIATION DOSE DISTRIBUTIONS
RADIATION EFFECTS
SCATTERING
SEMIMETALS
SILICON
SPATIAL DOSE DISTRIBUTIONS