Reduced pressure deposited arsenic-doped silicon film and its properties as a diffusion source
Journal Article
·
· J. Appl. Phys.; (United States)
Extremely thin (50approx.550 A) and high-concentration (1 x 10/sup 21/approx.1 x 10/sup 22/ cm/sup -3/) arsenic-doped silicon (ADS) films are deposited at a reduced pressure by means of pyrolysis of SiH/sub 4/ and AsH/sub 3/. The ADS films are used as an improved diffusion source, which can be alternative to ion implantation. Arsenic drive-in diffusion from ADS film is carried out in an O/sub 2/ ambient, and the desired junctions are achieved. When the arsenic concentration is above 8 x 10/sup 21/ cm/sup -3/ and the film thickness above 200 A, however, arsenic atom pileup at the Si-SiO/sub 2/ interface, reverse dependence of junction depth on the ADS thickness, and high-density hillocks are observed. The increase in junction depth and the decrease in surface concentration during the subsequent heat treatment at 1000 /sup 0/C in N/sub 2/ are remarkable for high arsenic concentration and thick ADS films at low diffusion temperature. A modified simulation program is developed with Si-SiO/sub 2/ interface moving and concentration-dependent diffusion coefficient. The calculated profiles are in satisfactory agreement with the experimental profiles measured by secondary ion mass spectroscopy.
- Research Organization:
- Toshiba Research and Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki-city, Kanagawa 210, Japan
- OSTI ID:
- 6539834
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:2; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALLOYS
ARSENIC ADDITIONS
ARSENIC ALLOYS
ARSENIC COMPOUNDS
ARSENIC HYDRIDES
ATMOSPHERES
CHEMICAL REACTIONS
DECOMPOSITION
DIFFUSION
DIMENSIONS
DOPED MATERIALS
ELEMENTS
FILMS
HEAT TREATMENTS
HYDRIDES
HYDROGEN COMPOUNDS
JUNCTIONS
MATERIALS
NITROGEN
NONMETALS
OXYGEN
PYROLYSIS
QUANTITY RATIO
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SIMULATION
THERMOCHEMICAL PROCESSES
THICKNESS
VERY HIGH TEMPERATURE
360603* -- Materials-- Properties
ALLOYS
ARSENIC ADDITIONS
ARSENIC ALLOYS
ARSENIC COMPOUNDS
ARSENIC HYDRIDES
ATMOSPHERES
CHEMICAL REACTIONS
DECOMPOSITION
DIFFUSION
DIMENSIONS
DOPED MATERIALS
ELEMENTS
FILMS
HEAT TREATMENTS
HYDRIDES
HYDROGEN COMPOUNDS
JUNCTIONS
MATERIALS
NITROGEN
NONMETALS
OXYGEN
PYROLYSIS
QUANTITY RATIO
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SIMULATION
THERMOCHEMICAL PROCESSES
THICKNESS
VERY HIGH TEMPERATURE