RBS study of effect of arsenic and phosphorus interfacial segregation upon the sintering of contacts between implanted polycrystalline silicon and aluminum:silicon(1%)
Conference
·
OSTI ID:5336303
The sintering behavior of the interface between Al:Si(1%) alloy and polycrystalline Si (poly-Si) was studied as a function of the poly-Si implantation dose by combining RBS, SEM, TEM, and x-ray microanalysis. Two different N-dopants were used: arsenic and phosphorus. The dopants were implanted in the poly-Si layer and thermal annealing was used to obtain dopant segregation towards the poly-Si interfaces. After sintering, two main effects were detected: (1) Al-Si eutectic phase precipitates and Si crystallites are formed at the interface. (2) The density of precipitates is a function of the implantation dose. For doses above 1 x 10/sup 15/ at./cm/sup 2/, segregated arsenic and phosphorus are found to completely inhibit this precipitation process, provided that the segregation peak of the dopant profile is preserved before metallization. Several conclusions can be drawn: for surface concentrations higher than 8 x 10/sup 19/ at./cm/sup 3/, arsenic and phosphorus inhibit the precipitation of the Al-Si eutectic phase, and thus inhibit interactions between the films at the interface. Moreover, argon gas, used for sputtering deposition of aluminum, segregated at the poly-Si/Al:Si(1%) interface and may also inhibit the metal-semiconductor interdiffusion.
- Research Organization:
- Louvain Univ., Louvain-la-Neuve (Belgium). Microelectronics Lab.
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 5336303
- Report Number(s):
- CONF-840760-21; ON: DE850163615
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALLOYS
ALUMINIUM ALLOYS
ALUMINIUM BASE ALLOYS
ARSENIC
CRYSTAL DOPING
CRYSTALS
ELASTIC SCATTERING
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
INTEGRATED CIRCUITS
INTERFACES
ION IMPLANTATION
MICROELECTRONIC CIRCUITS
NONMETALS
PHOSPHORUS
POLYCRYSTALS
RUTHERFORD SCATTERING
SCATTERING
SEGREGATION
SEMIMETALS
SILICON
SILICON ALLOYS
SINTERING
360603* -- Materials-- Properties
ALLOYS
ALUMINIUM ALLOYS
ALUMINIUM BASE ALLOYS
ARSENIC
CRYSTAL DOPING
CRYSTALS
ELASTIC SCATTERING
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
INTEGRATED CIRCUITS
INTERFACES
ION IMPLANTATION
MICROELECTRONIC CIRCUITS
NONMETALS
PHOSPHORUS
POLYCRYSTALS
RUTHERFORD SCATTERING
SCATTERING
SEGREGATION
SEMIMETALS
SILICON
SILICON ALLOYS
SINTERING