Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers
Journal Article
·
· AIP Conference Proceedings
- CMM, Fondazione Bruno Kessler, Via Sommarive 18. 38123 Povo - Trento (Italy)
The behavior of ultra shallow ion implants of arsenic in Si following solid phase epitaxial re-growth process is reported. A 16 nm amorphous layer was created by ion implantation of Si{sup +} at energy 5 keV and a dose 1 Multiplication-Sign 10{sup 15} at/cm{sup 2}. As ion were implanted at 2 keV using 3 different doses: 1 Multiplication-Sign 10{sup 14}, 5 Multiplication-Sign 10{sup 14} and 1 Multiplication-Sign 10{sup 15} at/cm{sup 2}. The resulting As distributions, confined in the amorphous layer, were thermally treated at 550 Degree-Sign C for 5-300 s in order to electrically activate dopant atoms. Crystal re-growth and As redistribution was investigated by secondary ion mass spectrometry and medium energy ion scattering. A growth rate depending on the As concentration was observed, the rate being slower for higher As content. Arsenic re-distribution to the surface and at the end-of-range defects was observed and a segregation model was developed. Finally, the substitutional fraction of As atoms was related to sheet resistance measurements revealing a higher fraction of electrically active dopant atoms in pre-amorphized samples compared to not pre-amorphized.
- OSTI ID:
- 22075709
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1496; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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