Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth
- Philips Research Leuven, Kapeldreef 75, 3001 Leuven (Belgium)
We investigate the influence of the initial stage of the thermal treatment during solid-phase epitaxial regrowth (SPER) on the electrical activation level of arsenic in self-amorphized silicon, both with respect to heating ramp-up rates and the use of low-temperature preanneals. Enhancement of the electrically-active arsenic concentration by 14% is observed for activation with the fastest ramp-up rates (430 deg. C/s) compared to the slowest ones (36 deg. C/s). Around 50% of the 10{sup 15} at/cm{sup 2}, arsenic implant at 5 keV is found to be nonsubstitutional and this fraction reaches even 99% for dose 3x10{sup 15} at/cm{sup 2}. Arsenic clustering in silicon amorphous phase during SPER is recognized to play an important role in the decrease of the active dose.
- OSTI ID:
- 20702582
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 87; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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