Annealing behaviour of arsenic implants in silicon
Journal Article
·
· Radiat. Eff., v. 19, no. 4, pp. 271-275
The annealing behavior of 80-keV room-temperature arsenic implants in silicon below the amorphization dose was studied by comparing the physical profile and the electrical profiles following different isochronal anneals. It is shown that the electrically active fraction, which is about 0.4 after 30 min annealing at 600 deg C, increases continuously until 100% electrical activation of the arsenic ions is reached at about 900 deg C. The activation energy for the annealing process has been found equal to 0.4 eV. A tentative interpretation of the mechanism involved is given. From the analysis of the physical profiles obtained after isochronal annealing, an effective diffusion coefficient at 900 deg C equal to 5 x 10/sup -/6 cm/sup 2/s/su p -1/ has been calculated. (auth)
- Research Organization:
- Joint Inst. of Nuclear Research, Ispra, Italy
- NSA Number:
- NSA-29-016371
- OSTI ID:
- 4360564
- Journal Information:
- Radiat. Eff., v. 19, no. 4, pp. 271-275, Journal Name: Radiat. Eff., v. 19, no. 4, pp. 271-275; ISSN RAEFB
- Country of Publication:
- United Kingdom
- Language:
- English
Similar Records
Isothermal annealing of arsenic-implanted silicon
Rapid thermal annealing of arsenic and boron-implanted silicon
Rapid thermal anneal of arsenic implanted silicon
Journal Article
·
Fri Feb 01 00:00:00 EDT 1974
· J. Phys., C (London), v. 7, no. 3, pp. L50-L53
·
OSTI ID:4343611
Rapid thermal annealing of arsenic and boron-implanted silicon
Journal Article
·
Mon Nov 14 23:00:00 EST 1983
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5685822
Rapid thermal anneal of arsenic implanted silicon
Thesis/Dissertation
·
Mon Dec 31 23:00:00 EST 1984
·
OSTI ID:5283443