Isothermal annealing of arsenic-implanted silicon
Journal Article
·
· J. Phys., C (London), v. 7, no. 3, pp. L50-L53
Isothermal annealing studies of arsenic-implanted silicon were made at temperatures above 550 deg C for a dose below the amorphization limit. The process appears to follow first-order reaction kinetics with an activation energy of about 1 eV in the temperature range 550 to 850 deg C. (auth)
- Research Organization:
- Commission of the European Communities, Ispra, Italy
- NSA Number:
- NSA-29-027408
- OSTI ID:
- 4343611
- Journal Information:
- J. Phys., C (London), v. 7, no. 3, pp. L50-L53, Journal Name: J. Phys., C (London), v. 7, no. 3, pp. L50-L53; ISSN JPCPA
- Country of Publication:
- United Kingdom
- Language:
- English
Similar Records
Annealing behaviour of arsenic implants in silicon
A study of ion-implantation damage and annealing of silicon utilizing differential reflectometry
Reverse annealing of boron in boron implanted silicon
Journal Article
·
Wed Aug 01 00:00:00 EDT 1973
· Radiat. Eff., v. 19, no. 4, pp. 271-275
·
OSTI ID:4360564
A study of ion-implantation damage and annealing of silicon utilizing differential reflectometry
Thesis/Dissertation
·
Mon Dec 31 23:00:00 EST 1990
·
OSTI ID:7017908
Reverse annealing of boron in boron implanted silicon
Thesis/Dissertation
·
Tue Dec 31 23:00:00 EST 1985
·
OSTI ID:6654596