A study of ion-implantation damage and annealing of silicon utilizing differential reflectometry
Thesis/Dissertation
·
OSTI ID:7017908
Differential reflectometry was utilized for the first time in a systematic study of implantation damage and post-implantation annealing behavior of silicon. Arsenic, silicon, and boron ions of various energies and doses were utilized as implantation species. It was demonstrated that differential reflectometry is fast and nondestructive. The technique allows an immediate assessment of the changes in the electronic structure caused by ion implantation or annealing and a direct identification of the damaged structures of the implanted layer. A new method for data reduction from differential reflectograms was developed, which provides quantitative information on the thickness of implantation-induced amorphous layers in silicon. The effect of implantation energy, dose, species, annealing temperature, annealing time, and wafer orientation on damage structures created during implantation was studied. A detailed study on the isothermal annealing of implantation-induced amorphous silicon via solid phase epitaxial regrowth has been conducted.
- Research Organization:
- Florida Univ., Gainesville, FL (United States)
- OSTI ID:
- 7017908
- Country of Publication:
- United States
- Language:
- English
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