Optical investigations of ion implant damage in silicon

Journal Article · Fri Apr 15 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.340996· OSTI ID:5417628

Hummel, R E; Xi, W; Holloway, P H; Jones, K A

Ion implantation damage in silicon has been studied utilizing a new optical technique (differential reflectometry). It has been demonstrated that differential reflectometry can be used to identify whether an implanted layer is crystalline, damaged crystalline, or amorphous. The intensity of interband transitions can be used to determine the thickness of a damaged crystalline layer over a submerged amorphous layer. Interference effects were utilized to determine the thickness of an amorphous layer. Thus, differential optical reflectance has far-reaching potential for characterizing implanted substrates.

• Research Organization: Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
• OSTI ID: 5417628
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:8; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
DAMAGE
ELEMENTS
ION IMPLANTATION
LAYERS
OPTICAL PROPERTIES
OPTICAL REFLECTION
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
REFLECTION
SEMIMETALS
SILICON