Visible interference effects in silicon caused by high-current--high-dose implantation
Journal Article
·
· Appl. Phys. Lett.; (United States)
Silicon samples with visible color bands have been produced by high beam currents and have been studied using optical reflectivity, Rutherford backscattering (channeling), and transmission electron microscopy. Backscattering shows crystalline or near-crystalline layers at the surface, buried amorphous layers centered at the damage range, and a deeper damage peak. Complex interference spectra are successfully analyzed for two sets of fringes: a visible set primarily associated with the crystalline layer of index of refraction n/sub x/ at the surface and an infrared set primarily associated with the buried amorphous layer (n/sub a/>n/sub x/). Interband transitions in the ultraviolet confirm the existence of crystalline layers at the surface. The deeper damage peak is composed of small dislocations as shown by electron microscopy. (AIP)
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 7351526
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 29:10; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Evolution and Recrystallization of Buried Amorphous Layers in Al Implanted 4H-SiC
MeV ion implantation induced damage in relaxed Si{sub 1{minus}x}Ge{sub x}
Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering
Journal Article
·
Fri Oct 25 00:00:00 EDT 2002
· Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
·
OSTI ID:15002180
MeV ion implantation induced damage in relaxed Si{sub 1{minus}x}Ge{sub x}
Journal Article
·
Fri Feb 28 23:00:00 EST 1997
· Journal of Applied Physics
·
OSTI ID:467202
Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering
Journal Article
·
Wed Feb 27 23:00:00 EST 2013
· Journal of Applied Physics
·
OSTI ID:22102286
Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ARGON IONS
BACKSCATTERING
CHANNELING
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
ENERGY-LEVEL TRANSITIONS
HEAT TREATMENTS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
LAYERS
LINE DEFECTS
MICROSCOPY
OPTICAL PROPERTIES
ORDER-DISORDER TRANSFORMATIONS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
REFRACTIVITY
SCATTERING
SEMIMETALS
SILICON
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ARGON IONS
BACKSCATTERING
CHANNELING
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
ENERGY-LEVEL TRANSITIONS
HEAT TREATMENTS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
LAYERS
LINE DEFECTS
MICROSCOPY
OPTICAL PROPERTIES
ORDER-DISORDER TRANSFORMATIONS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
REFRACTIVITY
SCATTERING
SEMIMETALS
SILICON