Evolution and Recrystallization of Buried Amorphous Layers in Al Implanted 4H-SiC
Journal Article
·
· Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Epitaxial 4H-SiC has been irradiated at 150 K with 1.1 MeV Al molecular ions to fluences ranging from 1.35 x 1013 to 8.00 x 1014 Al cm-. The damage accumulation on both the C and Si sublattices of the as-implanted samples indicates a sigmoidal dependence on ion fluence, and a buried amorphous layer is formed at 2.00 x 1014 Al cm-. The width of the damage peak is unchanged until the local dose at the damage peak exceeds a critical amorphization value (0.12 dpa). The evolution and isochronal recovery of the buried amorphous layers at higher fluences were investigated by in-situ Rutherford backscattering spectrometry rapidly at 2.00 x 1014 Al cm- and eventually saturated at a thickness of about 500 nm at high fluences. Recovery processes occurred at both the rear interface and in the surface region, and relative amount of recovery decreased with increasing fluence for temperatures up to 870 K. No recovery is observed at or near the surface at the highest fluence, which supports the absence of any residual crystallinity in the surface region.
- Research Organization:
- Pacific Northwest National Lab., Richland, WA (US), Environmental Molecular Sciences Laboratory (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC06-76RL01830
- OSTI ID:
- 15002180
- Report Number(s):
- PNNL-SA-35270; 3448; KC0201020
- Journal Information:
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms Journal Issue: 3-4 Vol. 195
- Country of Publication:
- United States
- Language:
- English
Similar Records
Damage Evolution and Recovery in Al-Implanted 4H-SiC
Damage Evolution and Recovery on both Si and C Sublattices in Al-implanted 4H-SiC Studied by Rutherford Backscattering Spectroscopy and Nuclear Reaction Analysis
Characterization of Defects in N-type 4H-SiC After High-Energy N Ion Implantation by RBS-Channeling and Raman Spectroscopy
Conference
·
Fri Nov 30 23:00:00 EST 2001
·
OSTI ID:15001042
Damage Evolution and Recovery on both Si and C Sublattices in Al-implanted 4H-SiC Studied by Rutherford Backscattering Spectroscopy and Nuclear Reaction Analysis
Journal Article
·
Wed May 15 00:00:00 EDT 2002
· Journal of Applied Physics
·
OSTI ID:15001579
Characterization of Defects in N-type 4H-SiC After High-Energy N Ion Implantation by RBS-Channeling and Raman Spectroscopy
Journal Article
·
Fri Aug 01 00:00:00 EDT 2014
· Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 332:28-32
·
OSTI ID:1170469