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Damage Evolution and Recovery on both Si and C Sublattices in Al-implanted 4H-SiC Studied by Rutherford Backscattering Spectroscopy and Nuclear Reaction Analysis

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.1469204· OSTI ID:15001579
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Damage evolution in 4H-SiC epitaxial layers irradiated with 1.1 MeV Al molecular ions at 150 K to ion fluences from 0.15 to 2.25 Al/nm and subsequent damage recovery following isochronal annealing at temperatures up to 870 K were studied by Rutherford backscattering spectroscopy (RBS) and nuclear reaction analysis (NRA). Using a 0.94 MeV D beam in channeling geometry, disorder on both the Si and C sublattices was characterized simultaneously by measuring scattering/reaction yields from RBS combined with 12C(d,p)13C NRA analysis. The relative disorder on the as-implanted sublattices follows a sigmoidal dependence on ion fluence and the relative disorder on the C sublattice is higher than that on the Si sublattice at low ion fluences. Isochronal recovery on both the Si and C sublattices exhibits similar nonlinear dependence on annealing temperature, with several step-like recovery regimes that are associated with different recovery processes.
Research Organization:
Pacific Northwest National Lab., Richland, WA (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC06-76RL01830
OSTI ID:
15001579
Report Number(s):
PNNL-SA-34878; KC0201020
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 91; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
AMORPHIZATION
ANNEALING
CHANNELING
DEFECT RECOVERY
GEOMETRY
ION CHANNELING
IRRADIATION
IRRADIATION EFFECTS
MOLECULAR IONS
NUCLEAR REACTION ANALYSIS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON CARBIDE
SILICON CARBIDES