Deuterium Channeling Study of Disorder in Al-()-Implanted 6H-SiC

Journal Article · Wed May 01 04:00:00 EDT 2002 · Nuclear Instruments and Methods in Physics Research, Section B

DOI:https://doi.org/10.1016/S0168-583X(01)01194-6· OSTI ID:15001001

Jiang, Weilin; Weber, William J; Thevuthasan, Suntharampillai; Shutthanandan, V

Single crystal 6H-SiC wafers have been irradiated 60? off normal at 150, 190, 250 and 295 K using 1.1 MeV Al ions over fluences from 0.15 to 2.85 ions/nm. The accumulation and recovery of disorder on both the Si and C sublattices have been measured simultaneously using in situ 0.94 MeV D Rutherford backscattering 28Si(d,d)28Si and nuclear reaction 12C(d,p)13C along the <0001>-axial channeling direction. The behavior of disorder accumulation and recovery on the Si and C sublattices is similar. The data suggest that a dynamic recovery stage occurs between irradiation temperatures of 190 and 250 K. At intermediate doses, isochronal annealing (20 min) results show that significant thermal recovery occurs between 420 and 720 K. Complete recovery is not observed by thermal annealing up to the highest temperature (870 K) used in this study.

• Research Organization: Pacific Northwest National Lab., Richland, WA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC06-76RL01830
• OSTI ID: 15001001
• Report Number(s): PNNL-SA-35045; KC0201020
• Journal Information: Nuclear Instruments and Methods in Physics Research, Section B, Journal Name: Nuclear Instruments and Methods in Physics Research, Section B Journal Issue: 1-4 Vol. 190; ISSN 0168-583X
• Country of Publication: United States
• Language: English

Related Subjects

6H-SIC
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ANNEALING
AXIAL CHANNELING DIRECTION
BACKSCATTERING
C
CHANNELING
DEUTERIUM
DISORDER ACCUMULATION AND RECOVERY
ION-BEAM IRRADIATION
IRRADIATION
ISOCHRONAL ANNEALING
MONOCRYSTALS
NRA
NUCLEAR REACTIONS
RBS
RBS AND NRA CHANNELING ANALYSES
SI
THERMAL ANNEALING
THERMAL RECOVERY