Damage Evolution and Recovery in 4H and 6H Silicon Carbide Irradiated with Aluminum Ions

Journal Article · Wed May 29 04:00:00 EDT 2002 · Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms

DOI:https://doi.org/10.1016/S0168-583X(02)00602-X· OSTI ID:15001292

Weber, William J; Jiang, Weilin; Zhang, Yanwen; Hallen, Anders

Damage evolution and isochronal recovery have been studied in single crystal 4H and 6H SiC irradiated with 1.1 MeV Al molecular ions at 150 K to ion fluences ranging from 0.15 to 2.85 Al+/nm. The damage evolution and recovery on both the Si and C sublattices were determined using a 0.94 MeV deuterium beam in ion channeling geometry by simultaneously measuring the scattering/reaction yield from Rutherford backscattering spectrometry combined with 12C(d,p)13C nuclear reaction analysis. The rate of damage evolution at 150 K is higher for 4H-SiC than for 6H-SiC. At low doses, the rate of C disordering is higher than that for Si, which is consistent with the lower displacement energy for C. Both 4H and 6H SiC exhibit only minor damage recovery below 300 K. Above 300 K, damage recovery on the Si and C sublattices is similar for both 4H and 6H SiC. Three distinct recovery stages are observed on each sublattice in 4H-SiC, and at high doses, where a buried amorphous layer is produced, an additional recovery stage is observed above 800 K.

• Research Organization: Pacific Northwest National Lab., Richland, WA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC06-76RL01830
• OSTI ID: 15001292
• Report Number(s): PNNL-SA-35129; KC0201020
• Journal Information: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms Journal Issue: 1-4 Vol. 191
• Country of Publication: United States
• Language: English

Related Subjects

4H-SIC
74 ATOMIC AND MOLECULAR PHYSICS
ALUMINIUM
DEUTERIUM
GEOMETRY
ION CHANNELING
MOLECULAR IONS
MONOCRYSTALS
NUCLEAR REACTION ANALYSIS
RADIATION DAMAGE
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON CARBIDE
SILICON CARBIDES
THERMAL RECOVERY