Ion implantation damage and annealing in InAs, GaSb, and GaP

Journal Article · Fri Jul 15 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341952· OSTI ID:7006065

Pearton, S J; Von Neida, A R; Brown, J M; Short, K T; Oster, L J; Chakrabarti, U K

The characteristics of ion implantation induced damage in InAs, GaSb, and GaP, and its removal by rapid thermal annealing have been investigated by Rutherford backscattering and transmission electron microscopy. There is relatively poor regrowth of these materials if they were amorphized during the implantation, leaving significant densities of dislocation loops, microtwins, and in the case of GaSb, polycrystalline material. For implant doses below the amorphization threshold, rapid annealing produces good recovery of the lattice disorder, with backscattering yields similar to unimplanted material. The redistribution of the implanted acceptor Mg is quite marked in all three semiconductors, whereas the donor Si shows no measurable motion after annealing of InAs or GaP. In GaSb, however, where it appears to predominantly occupy the group III site, it shows redistribution similar to that of Mg.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 7006065
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:2; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BACKSCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
DAMAGE
DISLOCATIONS
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HEAT TREATMENTS
IMPURITIES
INDIUM ARSENIDES
INDIUM COMPOUNDS
ION IMPLANTATION
LINE DEFECTS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
POLYCRYSTALS
RADIATION EFFECTS
SCATTERING