Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiation

Journal Article · Fri Sep 15 00:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90430· OSTI ID:6674871

Williams, J S; Brown, W L; Leamy, H J; Poate, J M; Rodgers, J W; Rousseau, D; Rozgonyi, G A; Shelnutt, J A; Sheng, T T

Arsenic- and antimony-implanted silicon wafers have been annealed by a cw Ar ion laser. Glancing-angle Rutherford backscattering and transmission electron and optical microscopy measurements indicate that the mechanism for recrystallization is one of thermal solid-phase regrowth from the underlying crystalline-amorphous interface. No implant redistribution is observed.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6674871
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:6; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ANTIMONY IONS
ARSENIC IONS
ATOMIC IONS
CHARGED PARTICLES
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
ELEMENTS
HEAT TREATMENTS
IONS
LASER RADIATION
LASERS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RECRYSTALLIZATION
SEMIMETALS
SILICON
SOLID STATE LASERS