Epitaxial regrowth of Ar-implanted amorphous silicon

Journal Article · Sun Oct 01 04:00:00 EDT 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.324415· OSTI ID:7057647

Revesz, P; Wittmer, M; Roth, J; Mayer, J W

The influence of Ar on the recrystallization of implanted amorphous silicon layers has been studied. Investigation of the growth kinetics at temperatures up to 575 /sup 0/C showed that epitaxial regrowth of silicon is halted if the Ar concentration at the amorphous--single-crystal interface reaches about 1.5 x 10/sup 20/ cm/sup -3/. Further regrowth could be obtained by higher-temperature annealings, during which the Ar concentration profile was changed and part of the Ar diffused out. TEM analysis showed, that in samples with a dose of 6 x 10/sup 15/ Ar ions/cm/sup 2/, the formation of Ar bubbles occurred during implantation. During annealing the Ar bubbles grew about a factor of 6 in diameter. The epitaxially regrown silicon layers contained a large amount of microtwins. We present a model which relates the occurrence of microtwins to the existence of Ar bubbles.

• Research Organization: Caltech, Pasadena, California 91125
• OSTI ID: 7057647
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:10; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ARGON IONS
BUBBLES
CHARGED PARTICLES
CRYSTAL GROWTH
DOSE-RESPONSE RELATIONSHIPS
ELEMENTS
EPITAXY
HEAT TREATMENTS
INTERFACES
ION IMPLANTATION
IONS
LAYERS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RECRYSTALLIZATION
SEMIMETALS
SILICON
TWINNING