Regrowth behavior of ion-implanted amorphous layers on <111> silicon

Journal Article · Thu Jul 15 04:00:00 EDT 1976 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.88980· OSTI ID:7362553

Csepregi, L; Mayer, J W; Sigmon, T W

The regrowth of Si crystal from amorphous layers created by Si implantation into <111>, <100>, and <110> Si was studied. Channeling effect measurements show that the growths on the <110> and <100> substrates are epitaxial and linear with time. For the <111> samples the growth at 550/sup 0/C was significantly slower and nonlinear in time and the regrown layer contained a high concentration of defects. TEM micrographs indicate the presence of stacking faults and/or microtwins in the <111> samples. (AIP)

• Research Organization: California Institute of Technology, Pasadena, California 91125
• OSTI ID: 7362553
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 29:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ATOMIC IONS
BACKSCATTERING
CHANNELING
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
HEAT TREATMENTS
ION CHANNELING
ION IMPLANTATION
IONS
LAYERS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SCATTERING
SEMIMETALS
SILICON
SILICON IONS
STACKING FAULTS
TWINNING