Substrate orientation dependence of enhanced epitaxial regrowth of silicon

Journal Article · Wed Aug 15 04:00:00 EDT 1984 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.334050· OSTI ID:6704385

Ho, K T; Suni, I; Nicolet, M

This work extends the study of dopant-enhanced epitaxial regrowth rate of amorphized Si from the <100> to the <110> and <111> orientations of Si. Boron and phosphorus dopants are considered. The annealing temperatures are 500 and 550 /sup 0/C. Phosphorus enhances the growth rates in all three orientations by a constant factor of 8.1 +- 0.9. Boron produces a higher enhancement factor of 12.2 +- 1.2, except in the case of <100>. Implications of the results on various growth models are considered. The crystalline quality of regrown <111> layers is improved in the doped samples.

• Research Organization: California Institute of Technology, Pasadena, California 91125
• OSTI ID: 6704385
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 56:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation &amp; Manufacture
360602* -- Other Materials-- Structure &amp; Phase Studies
ANNEALING
BORON IONS
CHARGED PARTICLES
CRYSTAL DOPING
CRYSTAL STRUCTURE
DOPED MATERIALS
ELEMENTS
EPITAXY
GRAIN ORIENTATION
HEAT TREATMENTS
HIGH TEMPERATURE
ION IMPLANTATION
IONS
MATERIALS
MICROSTRUCTURE
ORIENTATION
PHOSPHORUS IONS
RECRYSTALLIZATION
SEMIMETALS
SILICON
SUBSTRATES