Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si

Journal Article · Sat Jul 01 04:00:00 EDT 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325397· OSTI ID:6806062

Csepregi, L; Kennedy, E F; Mayer, J W; Sigmon, T W

Amorphous layers, approximately 4000 A thick, were formed on single-crystal Si samples by implantation of /sup 2/8Si ions at LN/sub 2/ substrate temperature. Channeling-effect measurements with MeV /sup 4/He ions were used to measure the thickness of the amorphous layers and to measure the subsequent epitaxial regrowth on the underlying crystalline substrates. For annealing temperatures between 450 and 575 /sup 0/C, the growth rate showed a strong dependence on the substrate orientation with <100>-oriented samples exhibiting about a 25 times higher growth rate than <111>-oriented samples. Measurements of the growth rate on a series of samples cut in 5/sup 0/ angular increments show that there is a monotonic decrease from the <100> to the <111> orientation. A simple model is proposed to explain the observed orientation dependence.

• Research Organization: California Institute of Technology, Pasadena, California 91125
• OSTI ID: 6806062
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ATOMIC IONS
CHANNELING
CHARGED PARTICLES
ELEMENTS
EPITAXY
EVEN-EVEN NUCLEI
HEAT TREATMENTS
ION CHANNELING
ION IMPLANTATION
IONS
ISOTOPES
LAYERS
LIGHT NUCLEI
NUCLEI
ORIENTATION
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RECRYSTALLIZATION
SEMIMETALS
SILICON
SILICON 28
SILICON IONS
SILICON ISOTOPES
STABLE ISOTOPES
SUBSTRATES