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Reordering of amorphous layers of Si implanted with /sup 31/P, /sup 75/As, and /sup 11/B ions

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.323408· OSTI ID:7289836
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The effect of impurities on the epitaxial regrowth of Si from amorphous layers created by ion implantation into <100> and <111> Si was studied by channeling effect measurements with 2-MeV /sup 4/He ions. The Si wafers were first implanted at -180 /sup 0/C with /sup 28/Si ions to form amorphous layers approximately 4000 A thick and then were implanted with /sup 31/P, /sup 75/As, or /sup 11/B ions to concentration levels of about 0.2--0.5 at.%. For these layers with impurity species the growth rate is found to be significantly higher than for those without. The measured regrowth rate at 500 /sup 0/C for <100> Si with an impurity concentration of approx.2 x 10/sup 20/ cm/sup -3/ of /sup 31/P or /sup 75/As is a factor of 6 greater, and of /sup 11/B a factor of 20 greater, than the regrowth rate in amorphous layers without impurities. For the case of /sup 31/P implanted <100> Si the activation energy of regrowth is close to that (2.35 eV) found for impurity-free amorphous layers and for /sup 11/B implanted samples the energy is 1.9 eV. For <111> /sup 31/P implanted Si specimens there is an increase in growth rate over that found in impurity-free samples and a high level of residual disorder.
Research Organization:
California Institute of Technology, Pasadena, California 91125
OSTI ID:
7289836
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:10; ISSN JAPIA
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ARSENIC 75
ARSENIC ISOTOPES
BEAMS
BORON 11
BORON ISOTOPES
CHANNELING
CRYSTAL GROWTH
CRYSTALLIZATION
ELEMENTS
EPITAXY
IMPURITIES
INTERMEDIATE MASS NUCLEI
ION BEAMS
ION CHANNELING
ION IMPLANTATION
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
LIGHT NUCLEI
NUCLEI
ODD-EVEN NUCLEI
ORDER-DISORDER TRANSFORMATIONS
PHASE TRANSFORMATIONS
PHOSPHORUS 31
PHOSPHORUS ISOTOPES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIOISOTOPES
SECONDS LIVING RADIOISOTOPES
SEMIMETALS
SILICON
STABLE ISOTOPES