Influence of /sup 16/O, /sup 12/C, /sup 14/N, and noble gases on the crystallization of amorphous Si layers

Journal Article · Sat Oct 01 04:00:00 EDT 1977 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.323409· OSTI ID:7214998

Kennedy, E F; Csepregi, L; Mayer, J W; Sigmon, T W

Channeling effect measurements have been used to study the effect of impurities on the epitaxial regrowth of amorphous silicon layers on single-crystal silicon. Implantation was used to form the amorphous layers and also to introduce the impurities /sup 12/C, /sup 14/N, /sup 16/O, /sup 20/Ne, /sup 40/A, and /sup 84/Kr. For /sup 16/O implants, the growth rate at 550 /sup 0/C depended on the /sup 16/O concentration and at the level of 0.5 at.% the rate was reduced from about 90 to about 10 A/min. For similar atomic concentrations of /sup 14/N, the rate was comparable to the /sup 16/O case. For comparable concentrations of /sup 12/C, the regrowth rate was found to be three times higher than for that of the /sup 16/O case. Noble gas ions are also found to retard the growth rate of the amorphous layers. For /sup 40/Ar at about the 0.5-at.% level, the regrowth rate is appreciably slower than even that for the /sup 16/O case.

• Research Organization: California Institute of Technology, Pasadena, California 91125
• OSTI ID: 7214998
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:10; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ARGON 40
ARGON ISOTOPES
BEAMS
CARBON 12
CARBON ISOTOPES
CHANNELING
CRYSTAL GROWTH
CRYSTALLIZATION
ELEMENTS
EPITAXY
EVEN-EVEN NUCLEI
IMPURITIES
INTERMEDIATE MASS NUCLEI
ION BEAMS
ION CHANNELING
ION IMPLANTATION
ISOTOPES
KRYPTON 84
KRYPTON ISOTOPES
LAYERS
LIGHT NUCLEI
NEON 20
NEON ISOTOPES
NITROGEN 14
NITROGEN ISOTOPES
NUCLEI
ODD-ODD NUCLEI
OXYGEN 16
OXYGEN ISOTOPES
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON
STABLE ISOTOPES