Regrowth of amorphous layers created by high-dose antimony implantation in <100> silicon

Journal Article · Sun Jan 01 04:00:00 EST 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89828· OSTI ID:5405292

Tamminga, Y; Josquin, W J.M.J.

The epitaxial regrowth of amorphous silicon layers created by a high-dose antimony implantation in silicon was found to be influenced by the presence of antimony atoms. At concentrations of less than 10/sup 20//cm/sup 3/ the regrowth rate was enhanced in comparison with undoped amorphous silicon layers. For higher antimony concentrations, however, this regrowth was retarded, while for concentrations of about 5 x 10/sup 21//cm/sup 3/ it was completely inhibited. The concentration limit above which the influence on the regrowth rate is negative appears to be an order of magnitude larger than the maximum solid solubility of the impurity atoms.

• Research Organization: Philips Research Laboratories, Eindhoven, The Netherlands
• OSTI ID: 5405292
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 32:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ANTIMONY IONS
ATOMIC IONS
CHARGED PARTICLES
CRYSTAL GROWTH
DEPTH DOSE DISTRIBUTIONS
DOSE-RESPONSE RELATIONSHIPS
ELEMENTS
ENERGY RANGE
EPITAXY
HEAT TREATMENTS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
LAYERS
PHYSICAL RADIATION EFFECTS
RADIATION DOSE DISTRIBUTIONS
RADIATION EFFECTS
RECRYSTALLIZATION
SEMIMETALS
SILICON
SPATIAL DOSE DISTRIBUTIONS