Incorporation of implanted In and Sb in silicon during amorphous layer regrowth

Journal Article · Mon Jan 01 04:00:00 EST 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325686· OSTI ID:6510823

Blood, P; Brown, W L; Miller, G L

Annealing of indium and antimony implanted into silicon at doses sufficient to produce an amorphous layer (10/sup 14/--10/sup 15/ ions cm/sup -2/) has been studied using high-energy Rutherford backscattering. Annealing of these amorphous layers followed the behavior reported for layers formed by silicon ion bombardment and has a pronounced influence on both the retention and lattice-site location of the impurities, with marked differences between substrates of (111) and (100) orientation. Following epitaxial regrowth on both orientations at 550 /sup 0/C substitutional concentrations in excess of the solid solubility were observed. Impurity redistribution was not detected at this annealing temperature nor for 940 /sup 0/C annealing of (100) and (110) substrates, but migration toward the surface was observed after high-temperature annealing of (111) material. This resulted in a loss of approx.60% of implanted In after 1 h annealing, whereas antimony accumulated behind the native thermal oxide. Impurity atoms continued to migrate after lattice annealing had ceased, and it is proposed that the extended defect structure, which is unique to amorphous layers on (111) substrates annealed at high temperatures, provided the means for this out-diffusion. Two-step annealing of (111) material at 550 and 940 /sup 0/C resulted in a stable impurity distribution, consistent with the absence of this defect structure.

• Research Organization: Philips Research Laboratories, Redhill, Surrey, England
• OSTI ID: 6510823
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ANTIMONY IONS
ATOMIC IONS
BACKSCATTERING
CHARGED PARTICLES
CRYSTAL DOPING
DIFFUSION
ELASTIC SCATTERING
ELEMENTS
FILMS
HEAT TREATMENTS
IMPURITIES
INDIUM IONS
ION IMPLANTATION
IONS
LAYERS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RUTHERFORD SCATTERING
SCATTERING
SEMIMETALS
SILICON