Spatially varied activation of ion-implanted As during the regrowth of amorphous layers in Si

Journal Article · Thu Jun 01 04:00:00 EDT 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325225· OSTI ID:7095978

Ohmura, Y; Inoue, T; Yamamoto, Y

He backscattering technique and sheet-resistivity measurements show that the electrical activation of As implanted in (100) and (111) Si and annealed at relatively low temperatures (500--600 /sup 0/C) takes place from the vicinity of the crystalline substrate Si in the As profile. This is accompanied by the regrowth of the implantation-induced amorphous layer. The annealing temperature required for both the activation and the regrowth is dose dependent. No defect-induced diffusion of As has been observed in these annealing processes.

• Research Organization: Toshiba R and D Center, Tokyo Shibaura Electric Co., Ltd., 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki, Japan
• OSTI ID: 7095978
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:6; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ARSENIC IONS
ATOMIC IONS
CHARGED PARTICLES
DOSE-RESPONSE RELATIONSHIPS
ELEMENTS
HEAT TREATMENTS
ION IMPLANTATION
IONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON