Microsecond time-scale Si regrowth using a line-source electron beam

Journal Article · Mon Jun 01 04:00:00 EDT 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92204· OSTI ID:6449885

Knapp, J A; Picraux, S T

A line-source electron beam annealing system has been used to regrow ion-implanted amorphous layers on (100) Si within dwell times of 150--600 ms. The results indicate solid-phase epitaxial regrowth at interface velocities as high as approx.3 x 10/sup 7/ A/s. This solid-phase regrowth leads to minimum diffusion, in contrast to pulsed annealing in the liquid phase. The regrowth crystalline quality as measured by backscattering/channeling is nearly as good as for virgin Si. Line-source annealing can lead to reductions in processing times by factors of 10/sup 4/--10/sup 6/, compared to present cw spot annealing. The observed regrowth is shown to agree closely with calculation when oven regrowth data are extrapolated to temperatures near the melting point of crystalline Si. Our results indicate no large reduction of the melting point for amorphous Si, in constrast to a recent report.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• OSTI ID: 6449885
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
AMORPHOUS STATE
ANNEALING
BACKSCATTERING
BEAMS
CHANNELING
CRYSTAL GROWTH
DIFFUSION
ELECTRON BEAMS
ELEMENTS
HEAT TREATMENTS
INTERFACES
ION IMPLANTATION
LAYERS
LEPTON BEAMS
MATHEMATICAL MODELS
MELTING POINTS
PARTICLE BEAMS
PHYSICAL PROPERTIES
RECRYSTALLIZATION
SCATTERING
SEMIMETALS
SILICON
SOLIDS
THERMODYNAMIC PROPERTIES
TIME DEPENDENCE
TRANSITION TEMPERATURE
VELOCITY