Ion implantation and low-temperature epitaxial regrowth of GaAs
Channeling and transmission electron microscopy have been used to investigate the parameters that govern the extent of damage in ion-implanted GaAs and the crystal quality following capless furnace annealing at low temperature (approx.400 /sup 0/C). The implantation-induced disorder showed a strong dependence on the implanted ion mass and on the substrate temperature during implantation. When the implantation produced a fully amorphous surface layer the main parameter governing the regrowth was the amorphous thickness. Formation of microtwins after annealing was observed when the initial amorphous layer was thicker than 400 A. Also, the number of extended residual defects after annealing increased linearly with the initial amorphous thickness and extrapolation of that curve predicts good regrowth of very thin (<400 A) GaAs amorphous layers produced by ion implantation. A model is presented to explain the observed features of the low-temperature annealing of GaAs.
- Research Organization:
- California Institute of Technology, Pasadena, California 91125
- OSTI ID:
- 6463913
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:6; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
AMORPHOUS STATE
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
DAMAGE
DIMENSIONS
ELECTRON MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HIGH TEMPERATURE
ION IMPLANTATION
LAYERS
MATHEMATICAL MODELS
MICROSCOPY
PARAMETRIC ANALYSIS
PNICTIDES
RECRYSTALLIZATION
SUBSTRATES
SURFACES
TEMPERATURE DEPENDENCE
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY