Epitaxial regrowth of thin amorphous GaAs layers

Journal Article · Wed Jul 01 04:00:00 EDT 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92520· OSTI ID:6207998

Grimaldi, M G; Paine, B M; Maeenpaeae, M; Nicolet, M; Sadana, D K

Channeling and transmission electron microscopy have been used to investigate the parameters that govern the crystal quality following capless funace annealing at low temperature (approx. 400 /sup 0/C) in ion-implanted GaAs. From the results obtained, we concluded that the crystal quality after annealing depends strongly on the thickness of the amorphous layer generated by ion implantation and the number of residual defects increases linearly with the thickness of the implanted layer. Single-crystal regrowth free of defects detectable by megaelectron volt He/sup +/ channeling was achieved for a very thin amorphous layer (< or approx. = 400 A).

• Research Organization: California Institute of Technology, Pasadena, California 91125
• OSTI ID: 6207998
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 39:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation &amp; Manufacture
AMORPHOUS STATE
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
DIMENSIONS
ELECTRON MICROSCOPY
ENERGY RANGE
EPITAXY
FURNACES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HELIUM IONS
HIGH TEMPERATURE
ION CHANNELING
ION IMPLANTATION
IONS
LAYERS
MEV RANGE
MICROSCOPY
MONOCRYSTALS
PNICTIDES
RECRYSTALLIZATION
SPATIAL DEPENDENCE
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY