Material-dependent amorphization and epitaxial crystallization in ion-implanted AlAs/GaAs layer structures

Journal Article · Mon Sep 18 04:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.101657· OSTI ID:5485312

Cullis, A G; Chew, N G; Whitehouse, C R ^[1]; Jacobson, D C; Poate, J M; Pearton, S J ^[2]

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1. Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcestershire WR14 3PS, United Kingdom (GB)
2. AT T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974

When AlAs/GaAs layer samples are subjected to Ar{sup +} ion bombardment at liquid-nitrogen temperature, it is shown that very different damage structures are produced in the two materials. While the GaAs is relatively easily amorphized, the AlAs is quite resistant to damage accumulation and remains crystalline for the ion doses employed in these investigations. Epitaxial regrowth of buried amorphous GaAs layers of thicknesses up to 150 nm can be induced by rapid thermal annealing. It is demonstrated that differences in the initial damage state have a strong influence upon the nature of lattice defects produced by annealing.

• OSTI ID: 5485312
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:12; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMORPHOUS STATE
ANNEALING
ARGON IONS
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
COLLISIONS
CRYSTALLIZATION
DAMAGE
DIMENSIONS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION COLLISIONS
IONS
LOW TEMPERATURE
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
THICKNESS