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Title: Material-dependent amorphization and epitaxial crystallization in ion-implanted AlAs/GaAs layer structures

Abstract

When AlAs/GaAs layer samples are subjected to Ar{sup +} ion bombardment at liquid-nitrogen temperature, it is shown that very different damage structures are produced in the two materials. While the GaAs is relatively easily amorphized, the AlAs is quite resistant to damage accumulation and remains crystalline for the ion doses employed in these investigations. Epitaxial regrowth of buried amorphous GaAs layers of thicknesses up to 150 nm can be induced by rapid thermal annealing. It is demonstrated that differences in the initial damage state have a strong influence upon the nature of lattice defects produced by annealing.

Authors:
; ;  [1]; ; ;  [2]
  1. Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcestershire WR14 3PS, United Kingdom (GB)
  2. AT T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
Publication Date:
OSTI Identifier:
5485312
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters; (USA)
Additional Journal Information:
Journal Volume: 55:12; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; PHYSICAL RADIATION EFFECTS; GALLIUM ARSENIDES; AMORPHOUS STATE; ANNEALING; ARGON IONS; CRYSTALLIZATION; DAMAGE; EPITAXY; ION COLLISIONS; LOW TEMPERATURE; THICKNESS; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; COLLISIONS; DIMENSIONS; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; PHASE TRANSFORMATIONS; PNICTIDES; RADIATION EFFECTS; 360605* - Materials- Radiation Effects

Citation Formats

Cullis, A G, Chew, N G, Whitehouse, C R, Jacobson, D C, Poate, J M, and Pearton, S J. Material-dependent amorphization and epitaxial crystallization in ion-implanted AlAs/GaAs layer structures. United States: N. p., 1989. Web. doi:10.1063/1.101657.
Cullis, A G, Chew, N G, Whitehouse, C R, Jacobson, D C, Poate, J M, & Pearton, S J. Material-dependent amorphization and epitaxial crystallization in ion-implanted AlAs/GaAs layer structures. United States. doi:10.1063/1.101657.
Cullis, A G, Chew, N G, Whitehouse, C R, Jacobson, D C, Poate, J M, and Pearton, S J. Mon . "Material-dependent amorphization and epitaxial crystallization in ion-implanted AlAs/GaAs layer structures". United States. doi:10.1063/1.101657.
@article{osti_5485312,
title = {Material-dependent amorphization and epitaxial crystallization in ion-implanted AlAs/GaAs layer structures},
author = {Cullis, A G and Chew, N G and Whitehouse, C R and Jacobson, D C and Poate, J M and Pearton, S J},
abstractNote = {When AlAs/GaAs layer samples are subjected to Ar{sup +} ion bombardment at liquid-nitrogen temperature, it is shown that very different damage structures are produced in the two materials. While the GaAs is relatively easily amorphized, the AlAs is quite resistant to damage accumulation and remains crystalline for the ion doses employed in these investigations. Epitaxial regrowth of buried amorphous GaAs layers of thicknesses up to 150 nm can be induced by rapid thermal annealing. It is demonstrated that differences in the initial damage state have a strong influence upon the nature of lattice defects produced by annealing.},
doi = {10.1063/1.101657},
journal = {Applied Physics Letters; (USA)},
issn = {0003-6951},
number = ,
volume = 55:12,
place = {United States},
year = {1989},
month = {9}
}