Fabrication of amorphous-crystalline superlattices in GeSi-Si and GaAs-AlAs

Journal Article · Mon Feb 04 00:00:00 EST 1991 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.104602· OSTI ID:5997128

Eaglesham, D J; Poate, J M; Jacobson, D C; Cerullo, M; Pfeiffer, L N; West, K ^[1]

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1. AT T Bell Labs, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (US)

A study is presented of MeV ion beam amorphization of epitaxial superlattices of GeSi-Si and GaAs-AlAs. In both superlattice systems, we observe preferential damage of one layer type (using transmission electron microscopy and Rutherford backscattering). Selective amorphization of the faster-damaging layers is demonstrated at higher doses, allowing us to form amorphous-crystalline ({ital a}-{ital c}) superlattices of {ital c}-Si/{ital a}-GeSi and {ital c}-AlAs/{ital a}-GaAs. By studying the buildup of damage in the two systems, we deduce differences between the ion beam damage processes in group III-V and IV semiconductors. The most marked distinction is that the AlAs layers inhibit amorphization of the GaAs contiguous with the interface, while Si layers do not appear to affect the amorphization of the adjacent GeSi. This leads us to the tentative conclusion that GaAs amorphization is strongly affected by the local concentration of point defects which may diffuse hundreds of angstroms at {approx}80 K and recombine in the AlAs layer.

• OSTI ID: 5997128
• Journal Information: Applied Physics Letters; (USA), Vol. 58:5; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
GALLIUM ARSENIDES
GERMANIUM SILICIDES
SILICON
DAMAGE
ION BEAMS
ION IMPLANTATION
RECRYSTALLIZATION
SUPERLATTICES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
ELEMENTS
GALLIUM COMPOUNDS
GERMANIUM COMPOUNDS
PNICTIDES
RADIATION EFFECTS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
360605* - Materials- Radiation Effects