Fabrication of amorphous-crystalline superlattices in GeSi-Si and GaAs-AlAs
- AT T Bell Labs, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (US)
A study is presented of MeV ion beam amorphization of epitaxial superlattices of GeSi-Si and GaAs-AlAs. In both superlattice systems, we observe preferential damage of one layer type (using transmission electron microscopy and Rutherford backscattering). Selective amorphization of the faster-damaging layers is demonstrated at higher doses, allowing us to form amorphous-crystalline ({ital a}-{ital c}) superlattices of {ital c}-Si/{ital a}-GeSi and {ital c}-AlAs/{ital a}-GaAs. By studying the buildup of damage in the two systems, we deduce differences between the ion beam damage processes in group III-V and IV semiconductors. The most marked distinction is that the AlAs layers inhibit amorphization of the GaAs contiguous with the interface, while Si layers do not appear to affect the amorphization of the adjacent GeSi. This leads us to the tentative conclusion that GaAs amorphization is strongly affected by the local concentration of point defects which may diffuse hundreds of angstroms at {approx}80 K and recombine in the AlAs layer.
- OSTI ID:
- 5997128
- Journal Information:
- Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 58:5; ISSN APPLA; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
DAMAGE
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
ION BEAMS
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RECRYSTALLIZATION
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SUPERLATTICES